SANTA CLARA, Calif., Dec. 7, 2005 — Intel Corporation today announced development of a new, ultra-fast, yet very low power prototype transistor using new materials that could form the basis of its microprocessors and other logic products beginning in the second half of the next decade.
Intel and QinetiQ researchers have jointly demonstrated an enhancement-mode transistor using indium antimonide (chemical symbol: InSb) to conduct electrical current. Transistors control the flow of information/electrical current inside a chip. The prototype transistor is much faster and consumes less power than previously announced transistors. Intel anticipates using this new material to complement silicon, further extending Moore’s Law.
Significant power reduction at the transistor level, accompanied by a substantial performance increase, could play a crucial role in delivering future platforms to computer users by allowing an increased number of features and capabilities. Considerably less energy used and heat generated could add significant battery life for mobile devices and increase opportunities for building smaller more powerful products.
The Intel Press Room has all the details.
